R1RW0404D Series
4M High Speed SRAM (1-Mword × 4-bit)
REJ03C0115-0100Z Rev.
1.
00 Mar.
12.
2004
Description
The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.
It has realized high speed access time by employing CMOS process (6-
transistor memory cell) and high speed circuit designing technology.
It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.
The R1RW0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting.
Features
• Single supply: 3.
3 V ± 0.
3 V • Access time: 12 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times...