Power
Transistors
2SD1272
Silicon
NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2
Unit: mm
4.
2±0.
2
s Features
q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 200 150 6 2.
5 1 0.
1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
7.
5±0.
2
16.
7±0.
3
φ3.
1±0.
1
4.
0
14.
0±0.
5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25...