Green Product
SDT01N02
Ver 1.
0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
200V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
1.
5A
R DS(ON) ( Ω) Typ
3.
5 @ VGS=10V
R ugged and reliable.
S urface Mount P ackage.
D
G S
G
SOT-223
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a a
Limit 200 ±30 TA=25°C TA=25°C 1.
5 6 2.
98 -55 to 150
Units V V A A W °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resi...