Gre r Pro
STK900
Ver 1.
0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
ID
1A
R DS(ON) ( Ω) Max
1.
9 @ VGS=10V 2.
2 @ VGS=4.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D
D
G
S
SOT-89
D G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage
d
Drain Current-Continuous -Pulsed
a c
TA=25°C TA=70°C
Limit 100 ±20 1 0.
8 3.
16 1.
1
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
TA=25°C TA=70°C
1.
25 0.
8 -55 to 150
Op...