Gr Pr
STS6N20
Ver 1.
0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
60V
ID
0.
8A
R DS(ON) ( Ω) Max
1.
05 @ VGS=10V 1.
30 @ VGS=4.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Surface Mount Package.
D
S OT 23
D S G S G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 0.
8 0.
64 3
a
Units V V A A A W W °C
Maximum Power Dissipation
1.
25 0.
8 -55 to 150
Operating Junction and Storage Temperature Range
THER...