Green Product
STP45L01F
Ver1.
0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
TO-220F Package.
ID
40A
R DS(ON) (m Ω) Typ
20 @ VGS=10V
D
G D S
G
STF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy
d b a
Limit 100 ±20 T C =25 °C T C =70 °C 40 32 118 560
a
Units V V A A A mJ W W °C
Maximum Power Dissipation
TC=25°C TC=70°C
62.
5 40 -55 to 150
Operating Junction and Storage...