Green Product
SamHop Microelectronics Corp.
STU/D600S
Aug 25,2006
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
60V
FEATURES
( m W ) Max
ID
16A
RDS(ON)
Super high dense cell design for low RDS(ON).
55 @ VGS = 10V 70 @ VGS = 4.
5V
Rugged and reliable.
TO-252 and TO-251 Package.
D
D G S
G D
S
G
STU SERIES TO-252AA(D-PAK)
STD SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed
b a
Symbol VDS VGS 25 C 70 C ID IDM
a
Limit 60 20 16 10.
7 30 15 50 35 -55 to 175
Unit V V A A A A W C
Drain-Source Diode Forward Current Maximum Power Dissipation...