Gre r Pro
SDU/D02N25
Ver 1.
1
S a mHop Microelectronics C orp.
N-Channel Field Effect
Transistor
PRODUCT SUMMARY
V DSS
250V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ID
2A
R DS(ON) ( Ω) Typ
3.
2 @ VGS=10V
G S
G D
S
SDU SERIES TO - 252AA(D-PAK)
SDD SERIES TO - 251(I-PAK)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a c
Limit 250 ±30 TA=25°C TA=70°C 2 1.
5 6 10.
4 TA=25°C TA=70°C 42 27 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
Operating Ju...