STB/P8444
S a mHop Microelectronics C orp.
Ver 1.
0
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
40V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
TO-220 and TO-263 Package.
ID
80A
R DS(ON) (m Ω) Max
4.
8 @ VGS=10V
D
D
G
S
G D S
G
STP SERIES TO-220
STB SERIES TO-263(DD-PAK)
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 40 ±20 TC=25°C 80 264 306 TC=25°C 62 -55 to 150
Units V V A A mJ W °C
Sigle Pulse Avalanche Energy Maximum Power Dissipation
Operating Junction and Stora...