Part Number
|
HY5RS123235FP-2 |
Manufacturer
|
Hynix Semiconductor |
Description
|
512M (16Mx32) GDDR3 SDRAM |
Published
|
Oct 16, 2014 |
Detailed Description
|
HY5RS123235FP
512M (16Mx32) GDDR3 SDRAM HY5RS123235FP
This document is a general product description and is subject to...
|
Datasheet
|
HY5RS123235FP-2
|
Overview
HY5RS123235FP
512M (16Mx32) GDDR3 SDRAM HY5RS123235FP
This document is a general product description and is subject to change without notice.
Hynix Semiconductor does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
1.
3 / Feb.
2006 1
HY5RS123235FP Revision History
Revision No.
0.
1 0.
2 History Defined target spec.
Page 11) Add Cas Latency 11 Page 14) Write Latency definitions Page15) DI, WR_A, AL definitions Page47) Table18 typo corrected Page48) Table19 renewered Page50) note 46 added Page4) Ballout configurations correct Appendix C) BST function description - Non-Consectutive Read to Write timing clarifications - Read to Precharge timing C...
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