Gre r Pro
STB31L01
Ver 1.
1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
TO-263 Package.
ID
26A
R DS(ON) (m ) Typ
49 @ VGS=10V
D
G
S
S TB S E R IE S TO-263(DD-P AK)
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a c
Limit 100 ±20 TC=25°C TC=70°C 26 21.
8 76 36 TC=25°C TC=70°C 75 52.
5 -55 to 175
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junctio...