Gre r e Pro
STF2458A
Ver 1.
0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
10.
0 @ VGS=4.
5V 10.
5 @ VGS=4.
0V 24V 10A 11.
0 @ VGS=3.
7V 12.
0 @ VGS=3.
1V 15.
5 @ VGS=2.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G1 S1 S1
P IN 1
D1/D2
G2 S2 S2
Bottom Drain Contact
G1 S1 S1
3 2 1
4 G2 5 6 S2 S2
T D F N 2X 5 (Bottom view)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
TA=25°C TA=70°C TA=25°C TA=70...