S T A6610
S amHop Microelectronics C orp.
Nov.
24 2006
Dual N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
7.
6A
R DS (ON) ( m Ω ) Max
23 @ V G S = 10V 35 @ V G S = 4.
5V
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D1
8
D1
7
D2
6
D2
5
P DIP -8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage G ate-S ource Voltage Drain C urrent-C ontinuous @ T a -P ulsed
b a
S ymbol V DS VGS 25 C 70 C I DM IS PD T a=70 C TJ, TS TG ID
N-Channel 30 20 7.
6 6 30 1.
7 3 2 -55 to 150
Unit V V A A A A W C
Drain...