Green Product
SP8010E
Ver 1.
2
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Typ
4.
3 @ VGS=10V 24V 26A 4.
9 @ VGS=6V 7.
0 @ VGS=4V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D D D
P in 1
5 6 7 8
4 3 2 1
G S S S
D
TSON 3.
3 x 3.
3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
c a a c
Limit 24 ±20
Units V V A A W °C
TA=25°C TA=25°C
26 78 1.
67 -55 to 150
Maximum Power Dissipation
Operating Junction and St...