Green Product
SP3903
Ver 1.
4
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
30V
ID
7.
5A
R DS(ON) (m Ω) Max
22 @ VGS=10V 32 @ VGS=4.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
D1
D1
D2
D2
PIN1
PDFN 5x6
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID Parameter Drain-Source Voltage Gate-Source Voltage TA=25°C TA=70°C TC=25°C TC=100°C
d
Limit 30 ±20 7.
5 a 6 e 21.
5 13.
6 e 31 49 a 2.
5 a 1.
6 20.
8 8.
3 -55 to 150
a
Drain Current-Continuous
IDM EAS
-Pulsed
b
Units V V A A A A A mJ W W W W °C
Single Pulse Avalanche Ener...