Green Product
SP8256
Ver 1.
1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
8.
5 @ VGS=4.
5V 9.
0 @ VGS=4.
0V 20V 11A 9.
5 @ VGS=3.
7V 10.
0 @ VGS=3.
1V 11.
5 @ VGS=2.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
DF N 2X5
G2
S2
S2
Bottom Drain Contact
D1/D2
G1 S1
3 2 1
4 G2 5 6 S2 S2
G1 S1 S1
S1
(Bottom view)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
c ac
Limit 20 ±10 TA=25°C TA=70°C TA=25°C TA...