r re Pro
STS3409L
Ver 1.
0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
75 @ VGS=-10V -20V -3.
2A 95 @ VGS=-4.
5V 137 @ VGS=-2.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
D
S OT -23
D S G S G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -3.
2 -2.
6 -12
a
Units V V A A A W W °C
Maximum Power Dissipation
1.
25 0.
8 -55 to 150
Operating Junction and Storage Temperature ...