PFP4N60/PFF4N60
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 2.
3 Ω)@VGS=10V ■ Gate Charge (Typ.
27nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
1 2 3 1 2 3 1 3
PFF4N60
PFP4N60
BVDSS : 600V ID : 4.
5A RDS(ON) : 2.
3ohm
2
1.
Gate 2.
Drain 3.
Source
General Description
These N-channel enhancement mode field effect power
transistor is using Powergate semiconductor’s advanced planar stripe, DMOS technology intended for off line switch mode power supply.
Also, especially designed to minimize RDS(ON) and high rugged avalanche characteristics.
These devices are well suited for high efficiency switching Mode power supplies and active power factor correction.
Absolute maxim...