Green Product
SP2013
Ver 1.
1
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
20 @ VGS=-4.
5V 21 @ VGS=-4.
0V -20V -8.
5A 22 @ VGS=-3.
7V 25 @ VGS=-3.
1V 28 @ VGS=-2.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
D D D
P in 1
5 6 7 8
4 3 2 1
G S S S
D
TSON 3.
3 x 3.
3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a d
Limit -20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C -8.
5 -6.
8 -49
a
Units V V A A A W W °C
Maximum Power Dissi...