STM8456
S a mHop Microelectronics C orp.
Ver 1.
0
Dual Enhancement Mode Field Effect
Transistor ( N and P Channel )
PRODUCT SUMMARY (N-Channel)
V DSS
40V
PRODUCT SUMMARY (P-Channel)
V DSS
-40V
ID
6.
2A
R DS(ON) (m Ω) Max
33 @ VGS=10V
ID
-5.
3A
R DS(ON) (m Ω) Max
45 @ VGS=-10V 70 @ VGS=-4.
5V
45 @ VGS=4.
5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage
a
N-Channel 40 ±20 TA=25°C TA=70°C
d
P-Channel -40 ±20 -5.
3 -4.
2 -22 16 2 1.
28
Units V V A A A mJ W °C
Drain Current-Continuous -Pulsed
b
6.
2 4.
9 25 9
Single Pulse Avalanche Ene...