SVD10N65T/F(G)_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology.
The improved
planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 10A,650V,RDS(on)(typ.
)=0.
84Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capab...