HEXFET Power MOSFET
IRFH5303PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.2 15 0.6 82 V m : Qg (typical) RG (typical) ID nC : A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low charge (typical 15nC) Low Rg (typical 0.6 Ω) Low Thermal Resistance to PCB (2.7°C/W) ...
International Rectifier