IRFHM830DPbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
30 4.
3 13 1.
1 40
V mΩ nC Ω A
3.
3mm x 3.
3mm PQFN
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
• Synchronous MOSFET for Buck Converters
Features and Benefits
Features Low RDSon (≤ 4.
3mΩ )
Schottky intrinsic diode with low forward voltage
Benefits Lower Conduction Losses
Lower switching losses
Low Thermal Resistance to PCB (3.
4°C/W) 100% Rg tested Low Profile ( 1.
0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
results in
⇒
Increased Power Density Increased Reliability Increased...