DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) MAX 11m @ VGS = 4.
5V 20V 13mΩ @ VGS = 2.
5V 30m @ VGS = 1.
8V 50mΩ @ VGS = 1.
5V Package U-DFN2020-6 U-DFN2020-6 U-DFN2020-6 U-DFN2020-6 ID TA = +25°C 10.
5A 9.
4A 6.
5A 5.
5A Features         0.
6mm profile – ideal for low profile applications PCB footprint of 4mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
“Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)  2 Low Gate Threshold Voltage Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maint...

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