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Part Number
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DMN26D0UFB4 |
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Manufacturer
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Diodes |
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Description
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N-CHANNEL ENHANCEMENT MODE MOSFET |
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Published
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Oct 29, 2014 |
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Detailed Description
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DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 3.0Ω @ VGS = 4.5V 20V 6.0Ω @ VGS = 1.8V ...
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Datasheet
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DMN26D0UFB4
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Overview
DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 3.
0Ω @ VGS = 4.
5V 20V 6.
0Ω @ VGS = 1.
8V ID TA = 25°C 240mA 170mA
Features and Benefits
• • N-Channel MOSFET Low On-Resistance: • 3.
0 Ω @ 4.
5V • 4.
0 Ω @ 2.
5V • 6.
0 Ω @ 1.
8V • 10 Ω @ 1.
5V Very Low Gate Threshold Voltage, 1.
05V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package, 0.
4mm Maximum Package Height ESD Protected Gate Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resist...
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