Part Number
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FDMA8884 |
Manufacturer
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Fairchild Semiconductor |
Description
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Single N-Channel PowerTrench MOSFET |
Published
|
Oct 29, 2014 |
Detailed Description
|
FDMA8884 N-Channel Power Trench® MOSFET
May 2014
FDMA8884
Single N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Fea...
|
Datasheet
|
FDMA8884
|
Overview
FDMA8884 N-Channel Power Trench® MOSFET
May 2014
FDMA8884
Single N-Channel Power Trench® MOSFET
30 V, 6.
5 A, 23 mΩ
Features
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.
5 A Max rDS(on) = 30 mΩ at VGS = 4.
5 V, ID = 6.
0 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Application
Primary Switch
Pin 1
D
D
G D
Bottom Drain Contact
D D S
Drain
Source D G S D D MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS...
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