SEMICONDUCTOR
TECHNICAL DATA
General Description
A
KF4N80F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
C
F
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
O
B
E
G
DIM
MILLIMETERS
L
M
J
R
FEATURES
VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)(Max)=2.
6 Qg(typ.
)= 17nC @VGS=10V
D N N
H
1
2
3
1.
GATE 2.
DRAIN 3.
SOURCE
Q
A B C D E F G H J K L M N O Q R
_ 0.
2 10.
16 + _ 0.
2 15.
87 + _ 0.
2 2.
54 + _ 0.
1 0.
8 + _ 0.
1 3.
18 + _ 0.
1 3.
3 + _ 0.
2 12.
57 + _ 0.
1 0.
5 + _ 0.
5 13.
0 + _ 0.
1 3...