Insulated Gate Bipolar Transistor
IRGP4740DPbF IRGP4740D-EPbF VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C G Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCE(ON) typ. = 1.7V @ IC = 24A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E C E G C E n-channel G Gate IRGP4740DPbF TO-247AC C Collector IRGP4740D-EPbF TO-2...
International Rectifier