SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB2D0N60P/F/F2
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KHB2D0N60P
A O C F E G B Q I
DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for switching mode power supplies.
FEATURES
VDSS= 600V, ID= 2.
0A Drain-Source ON Resistance : RDS(ON)=5.
0 @VGS = 10V Qg(typ.
) = 10.
9nC
K M L J D N N
P
F G H I J
15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
5 + _ 0.
2 2.
4 + _ 0.
2 9.
2 +
H
K ...