Winsem Technology Corp.
High Voltage
NPN Power
Transistor with Diode
Features
• High Voltage • BVCEO : 400V • BVCBO : 800V • IC : 1.
5A • Silicon Triple Diffused Type •
NPN Silicon
Transistor with Diode • Free-wheeling Diode Inside • Low Variable Storage-time Spread • Low Base Drive Requirement • Half Bridge Light Ballast Application
Application
• Electronic Ballasts • Adapter • Lighting
WTBV118DI
POWER
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect Current Collector Peak Current (tp 5ms) Base Current Base Peak Current (tp 5ms) Total Power Dissipation @ Tc ≦ 25℃ (TO-251) Maximum Operating Junction Te...