2SK2008
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching
regulator, DC - DC converter, Motor Control
Outline
TO-3PFM
D G1
2 3 1.
Gate 2.
Drain 3.
Source
S
2SK2008
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 %
2.
Value at Tc = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 250 ±30 20 80 20 60 150 –55 to +150
Unit V V A ...