TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT PROCESS)
2SA1931
High-Current Switching Applications
2SA1931
Unit: mm
• Low saturation voltage: VCE (sat) = −0.
4 V (max) • High-speed switching time: tstg = 1.
0 µs (typ.
) • Complementary to 2SC4881
Maximum Ratings (Tc = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
−60 −50 −7 −5 −1 2.
0 20 150 −55 to 150
Electrical Characteristics (Tc = 25°C)
Unit V V V A A
W
°C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weigh...