INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD818
DESCRIPTION ·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.
) ·Low Collector Saturation Voltage·High Switching Speed
APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.
cnSYMBOL
PARAMETER
MAX
UNIT
.
iscsemVCBO
Collector-Base Voltage
1500
V
wwwVCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2.
5 A
IE Emitter Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
-2.
5 A 50 W 150 ℃
Tstg Storage Temperature Range
-65~150 ℃
isc Website：www.
isc...