Silicon N-Channel IGBT
GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Colle...
Toshiba Semiconductor