GT15Q102
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT15Q102
High Power Switching Applications
Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.
32 µs (max) Low Saturation Voltage: VCE (sat) = 2.
7 V (max)
· · · ·
Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 1200 ±20 15 30 170 150 -55~150 Unit V V A
W °C °C
JEDEC JEITA TOSHIBA Weight: 4.
6 g
― ― 2-16C1C
1
2002-01-18
GT15Q102
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Coll...