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Part Number
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GT20J101 |
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Manufacturer
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Toshiba Semiconductor |
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Description
|
Silicon N-Channel IGBT |
|
Published
|
Mar 23, 2005 |
|
Datasheet
|
GT20J101
|
Features
GT20J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J101
High Power Switching Applications
Unit: mm
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•
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• The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) ...
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