GT25Q301
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT25Q301
High Power Switching Applications Motor Control Applications
· · · · · The 3rd generation Enhancement-mode High speed: tf = 0.
32 µs (max) Low saturation voltage: VCE (sat) = 2.
7 V (max) FRD included between emitter and collector Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±20 25 50 25 50 200 150 −55 to 150 Unit V V A
Diode forward current
A
JEDEC JEITA
― ― 2-21F2C
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
W °C °C
TO...