GT30J324
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
Unit: mm
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.
05 μs (typ.
) Low switching loss : Eon = 1.
00 mJ (typ.
) : Eoff = 0.
80 mJ (typ.
)
• Low saturation voltage: VCE (sat) = 2.
0 V (typ.
)
• FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage
Collector current
Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperatu...