GT40M301
TOSHIBA INSULATED GATE BIPOLAR
TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40M301
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l The 3rd Generation
l FRD Included Between Emitter and Collector
l Enhancement−Mode
l High Speed IGBT : tf = 0.
25µs (TYP.
) FRD : trr = 0.
7µs (TYP.
)
l Low Saturation Voltage : VCE (sat) = 3.
4V (MAX.
)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage Gate−Emitter Voltage
Collector Current
Emitter−Collector Foward Current
Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Screw Torque
DC 1ms DC 1ms
SYMBOL
VCES VGES
IC ICP IECF IECFP
PC
Tj Tstg ―
RATING
900 ±25 40 80 15 120
200
150 −55~150
0.
8
EQUIVALEN...