IRF840LCS/LCL Power MOSFET VDSS = 500V, RDS(on) = 0.
85 ohm, ID = 8.
0 A D N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum.
Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C IGSS VGS = +20VDC VGS = -20VDC VGS(th) VDS = VGS, ID = 250µA Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 4.
8A Gate Charge Gate to Source Charge Gate to Drain Charge Input Capacitance Output Capacitance Transfer Capacitance Turn On Delay Time Turn Off...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)