AUTOMOTIVE GRADE
AUIRGP4063D AUIRGP4063D-E
INSULATED GATE BIPOLAR
TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (ON) Trench IGBT Technology • Low switching losses
• Maximum Junction temperature 175 °C • 5 μS short circuit SOA
G
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode
E
n-channel
• Tight parameter distribution
• Lead Free Package
C
VCES = 600V IC = 60A, TC = 100°C tSC 5μs, TJ(max) = 175°C VCE(on) typ.
= 1.
6V
C
Benefits
• High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to
Low VCE (ON) and...