Part Number
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RF1S50N06SM |
Manufacturer
|
Harris |
Description
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Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
Published
|
Dec 23, 2014 |
Detailed Description
|
SEMICONDUCTOR
RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM
December 1995
50A, 60V, Avalanche Rated N-Channel Enhancemen...
|
Datasheet
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RF1S50N06SM
|
Overview
SEMICONDUCTOR
RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM
December 1995
50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Features
• 50A, 60V • rDS(ON) = 0.
022Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature
Description
Packages
DRAIN (BOTTOM SIDE METAL)
JEDEC STYLE TO-247 SOURCE DRAIN GATE
The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use ...
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