Part Number
|
IXFK32N80P |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Dec 26, 2014 |
Detailed Description
|
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 32N80P IXFX 32N80P...
|
Datasheet
|
IXFK32N80P
|
Overview
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 32N80P IXFX 32N80P
VDSS ID25
RDS(on) trr
= 800 V
= 32 A
≤ 270 mΩ ≤ 250 ns
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-264) TO-264 PLUS247
Maximum Ratings
800 V 800 V ±30 V ±40 V
32 A 70 A 16 A 50 mJ 2.
0 J
10 V/ns
TO-264 (IXFK...
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