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Part Number
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FQD10N20C |
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Manufacturer
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Fairchild Semiconductor |
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Description
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200V N-Channel MOSFET |
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Published
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Dec 27, 2014 |
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Detailed Description
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FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET
FQD10N20C / FQU10N20C
N-Channel QFET® MOSFET
200 V, 7.8 A, 360 mΩ
Featur...
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Datasheet
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FQD10N20C
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Overview
FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET
FQD10N20C / FQU10N20C
N-Channel QFET® MOSFET
200 V, 7.
8 A, 360 mΩ
Features
• 7.
8 A, 200 V, RDS(on) = 360 mΩ (Max.
) @ VGS = 10 V, ID = 3.
9 A
• Low Gate Charge (Typ.
20 nC) • Low Crss (Typ.
40.
5 pF) • 100% Avalanche Tested
November 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (P...
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