isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage-
: VCE(sat)= -0.
3V(Max)@ (IC= -3A, IB= -0.
15A) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This type of power
transistor is developed for high-speed
switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7.
0
V
...