DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2462
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect
Transistor de-
signed for high current switching applications.
FEATURES • Low On-Resistance
RDS(on)1 = 0.
14 Ω MAX.
(@ VGS = 10 V, ID = 8.
0 A) RDS(on)2 = 0.
17 Ω MAX.
(@ VGS = 4 V, ID = 8.
0 A)
• Low Ciss Ciss = 790 pF TYP.
• Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings
15.
0 ±0.
3
3 ±0.
1
PACKAGE DIMENSIONS (in millimeters)
10.
0 ±0.
3
4.
5 ±0.
2
3.
2 ±0.
2
2.
7 ±0.
2
13.
5 MIN.
12.
0 ±0.
2
4 ±0.
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
100 V
Gate to Source Voltage
VGSS
±20 V
Drain Current...