INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD1833
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.
0V(Max.
)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.
cnSYMBOL
PARAMETER
VALUE
UNIT
.
iscsemVCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
wwwVEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
ICM Collector Current-Pulse
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
10 A
1.
5 W
30
150...