Part Number
|
IXGQ28N120B |
Manufacturer
|
IXYS |
Description
|
High Voltage IGBT |
Published
|
Jan 5, 2015 |
Detailed Description
|
High Voltage IGBT with Diode
IXGQ 28N120B IXGQ 28N120BD1
V CES
IC25 VCE(sat)
tfi(typ)
= 1200 V = 50 A = 3.5 V = 160 ns...
|
Datasheet
|
IXGQ28N120B
|
Overview
High Voltage IGBT with Diode
IXGQ 28N120B IXGQ 28N120BD1
V CES
IC25 VCE(sat)
tfi(typ)
= 1200 V = 50 A = 3.
5 V = 160 ns
Symbol
Test Conditions
VCES VCGR
V GES
VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
TC = 25°C TC = 110°C TC = 25°C, 1 ms
V GE
=
15
V,
T J
=
125°C,
R G
=
10
Ω
Clamped inductive load
PC TC = 25°C
TJ TJM Tstg
M Mounting torque d
Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s
Weight
D1 Maximum Ratings
1200 1200
V V
±20 V ±30 V
50 A 28 A 150 A
I = 60
CM
@0.
8 VCES
250
A W
-55 .
.
.
+150 150
-55 .
.
.
+150
°C °C °C
1.
13/10 Nm/lb.
in.
300 °C
6g
TO-3P (IXGQ)
G CE
G =...
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