isc Silicon
NPN Transistor
DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio power amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Curren
IB
Base Curren
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2SC2120
VALUE
UNIT
35
V
30
V
5
V
800
mA
160
mA
600
mW
150
℃
-55~150
℃
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