Ordering number:ENN6421 Features · Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
P-Channel Silicon MOSFET 2SJ348 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SJ348] 10.
2 3.
6 5.
1 4.
5 1.
3 2.
7 6.
3 15.
1 18.
0 5.
6 1.
2 2.
7 14.
0 0.
8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C 2.
55 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Volt...

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